Power Factor Performance of MnF3 Monolayer Under Hubbard Correction teguh budi prayitno
Universitas Negeri Jakarta
Abstract
The collinear density functional theory was used to obtain the electronic structure of MnF3 monolayer. We observed the Dirac half metallic properties from the band structures. The extracted data was used to compute the Seebeck coefficient and electrical conductivity, which were then used to calculate the power factor. As the Hubbard correction was applied, the band gap increases. The increase of band gap influenced the peak of power factor. To improve the performance, we used doping to shift the Fermi level in the power factor. This implied that Hubbard correction controlled the electronic structure, which affected the power factor.
