SIFAT TERMOELEKTRIK LAPISAN TIPIS ZnO TERDOPING Fe PADA SUHU 30-50 C Auliya Rahmawati1,a), Rike Yudianti2,b), Iwan Sugihartono1,c)
1 Program Studi Fisika, FMIPA, Universitas Negeri Jakarta, Jl. Rawamangun Muka, Jakarta Timur 13220, Indonesia
a) auliyarahmawati1109[at]gmail.com, b) rike001[at]brin.go.id, c) iwan.sugihartono[at]unj.ac.id
2 Pusat Riset Elektronika, Badan Riset dan Inovasi Nasional BRIN, KST Samaun Samadikun, Jalan Sangkuriang, Bandung 40135, Indonesia
Abstract
Thin films of ZnO and Fe doped ZnO have been synthesized using the spray coating method on silicon substrates for thermoelectric applications. The results of Seebeck coefficient testing in the temperature range of 298-318 K show that Fe doped ZnO material has better performance compared to pure ZnO. The highest Seebeck coefficient value obtained is minus 41.24 micronV per K for ZnO, while Fe doped ZnO shows a larger absolute value which is minus 91.67 micronV per K. The negative Seebeck value indicates that both materials are n type semiconductors with electrons as the majority charge carriers. The current voltage I V characteristics show a linear relationship indicating ohmic contact behavior with higher current in Fe doped ZnO compared to pure ZnO. This increase is predicted to be due to the effect of Fe dopant addition. In addition, the addition of Fe dopant also affects the increase in the Seebeck coefficient and electrical conductivity values. Therefore, the effect of Fe dopant is believed to be able to improve the thermoelectric efficiency of ZnO thin films.
Keywords: ZnO, Fe doping, thermoelectric, n type, Seebeck, I V
