Enhanced Growth of Multi Layer Graphene via Hot Wire in Plasma Very High Frequency Plasma Enhanced Chemical Vapor Deposition (HW IP-VHF-PECVD) Abd Wahidin Nuayi (a,b), Fatimah Arofiati Noor (a*), Toto Winata (a), Irzaman (c)
a) Physics of Electronic Materials Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung
Jln. Ganesha No 10, Bandung,40132 Indonesia.
* fatimah[at]fi.itb.ac.id
b)Physics of Materials Group, Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Gorontalo
Jln. Jend. Sudirman No. 06 Kota Gorontalo, Gorontalo, 96128 Indonesia.
c) Department of Physics Faculty of Mathematics and Natural Sciences, IPB University,
Jln. Raya Dramaga, Kecamatan Dramaga, Kab. Bogor,16680 Indonesia.
Abstract
The growth of multi-layer graphene has been carried out on a glass substrate using the hot wire in plasma - very high-frequency plasma-enhanced vapor deposition method. In the growth process, plasma from the precursor is generated through an rf power generator at a frequency of 70 MHz with methane gas \(CH_4\) as the precursor and Ni as the catalyst, which has been deposited and annealed beforehand. This study aimed to see the effect of the layer annealing process on the Ni catalyst layer on the graphene layer grown on it. Raman spectroscopy results with a laser beam of 532 nm (2.33 eV) and a grating of 1800 g/mm indicate the growth of the graphene layer on the surface of the Ni catalyst, with distinctive D-band, G-band, and 2D-band peaks at wave number 1335.31, 1607.74, and 2660.99 \(cm^{-1}\), respectively for samples where the catalyst layer was not annealed. Analysis of the Raman spectra, combined with the \(I_{2D}/I_G\) ratio, showed that the graphene grown in this study was a multilayer structure with ratio values ranging from 0.07-0.22, with crystal sizes varying between 15.62 - 2070 nm, which were estimated using the Tuinstra-Koenig equation. SEM analysis revealed that the annealing process on the Ni-catalyzed layer caused an increase in grain size homogeneity and thickness uniformity of the grown graphene layer, as well as revealed an increase in absorption and decreased transmittance of the graphene layer grown on the annealed Ni catalyst at higher annealing temperatures.
Keywords: Multi-layer graphene- HW IP-VHF-PECVD- Raman spectroscopy- I2D/IG ratio
