Microstructures, Magnetic, and Microwave Absorbing Properties of Bismuth Ferrite Thin Films on Kapton Sheet
Wiwien Andriyanti (a)(b), Maureen Annisatul Choir Hidayati Nur (a), Tjipto Sujitno (b), Hari Suprihatin (c), Vika Arwida Fanita Sari (c), Setyo Purwanto (d), and Edi Suharyadi (a*)

(a) Department of Physics, Universitas Gadjah Mada, Yogyakarta, Indonesia
(b) Research Center for Accelerator Technology, National Research and Innovation Agency, Indonesia
(c) Directorate of Laboratory Management, Research Facilities, and Science and Technology Park, Indonesia
(d) Research Center for Advanced Material, National Research and Innovation Agency, Indonesia

*Corresponding author: esuharyadi[at]ugm.ac.id

Abstract

The purpose of this research is to study the properties and performance of bismuth ferrite thin films as an absorbent material for electromagnetic waves (EM). The characterization and analytical results are expected to fulfill the criteria for an absorbent material for electromagnetic waves (EM) with high permeability and permittivity. The deposition process of bismuth ferrite thin films on Kapton substrates was carried out using DC sputtering. X-ray diffraction analysis showed the cubic crystal structure of the bismuth ferrite thin films, and it was obtained that the largest crystal size value was found in the sputtering duration sample of 10 minutes, namely 55 nm. The bonding analysis shows the presence of Bi-O and Fe-O functional groups at 432.26 and 519.48 cm (minus 1), respectively. The vibrating sample magnetometer shows the ferromagnetic behavior of the Bismuth Ferrite thin layer. It also confirms that the effect of the sputtering duration is that the longer the sputtering duration, the lower the magnetic saturation value (Ms) of bismuth ferrite thin films. The SEM-EDX analysis of bismuth ferrite thin film showed the existence of the elements Bi, Fe, and O, which were evenly distributed homogenously on the Kapton surface. The microwave absorption ability reaches a maximum reflection loss value of minus 40.4 dB (99.99%) in the range of 9.98 GHz with a sputtering duration of 10 minutes. Thus, the bismuth ferrite material was a potential candidate for applications as an electromagnetic wave absorber.

Keywords: Bismuth Ferrite- DC sputtering- thin films- ion implantation- Kapton

Topic: Material Physics